Title: Elucidation of the electrical characteristics of ≥3 multicomponent networks from new materials.
This milestone reports the electrical characterisation of multicomponent networks based on solution-processed 2D materials for printed electronic applications. Field-effect transistor (FET) devices were fabricated using heterostructures combining layered semiconducting nanosheets (MoS₂, WS₂, MoWSe₂) with dielectric niobate layers. The devices exhibit robust operation with high yield (approaching 100% in optimised conditions), low gate leakage currents (nA range), and tunable transport characteristics depending on material composition and thickness.
Charge transport analysis reveals moderate carrier mobility (≈0.6–2.5 cm² V⁻¹ s⁻¹) and on/off ratios up to ~10⁵, demonstrating effective electrostatic control in printed heterostructures. Hysteresis behaviour was observed and could be reduced through process optimisation, albeit with some trade-off in device yield. The results confirm that multicomponent nanosheet networks can achieve stable and reproducible transistor performance compatible with scalable deposition techniques.
In addition to transistor operation, the same class of materials has been successfully employed in light-emitting devices. LEDs based on both synthetic (MoS₂, WS₂) and natural MoS₂ nanosheets demonstrate electroluminescence, highlighting the versatility of these materials for integrated optoelectronic systems. These findings support the development of fully printed, multifunctional electronic and optoelectronic devices.
