Before the exceptional electronic properties of macroscale printed devices can be fully realized it is crucial to first assess individual nanosheets. The performance of printed devices is often limited by the quality of inter-nanosheet junctions, making precise electrical measurements of nanosheets essential.
Individual nanosheet field-effect transistors have been produced by UniBwM, using 5-terminal contact electrodes. After transferring nanosheets onto high-k dielectric substrates from various Transition-Metal Dichalcogenide (TMD) dispersions, an optimized electron beam lithography process has been developed. Multiple contact electrodes on individual TMD nanosheets were defined to perform 4-point probe measurements, which provide an accurate determination of nanosheet conductance while minimizing parasitic effects at the contact interfaces. Notably, this is the first time such measurements have been conducted on electrochemically exfoliated PtSe2 nanosheets. This characterization of novel TMD materials will help establish a benchmark for the maximum achievable mobility in future printed devices, with results compared to theoretical predictions and THz time-domain spectroscopy. The same measurement scheme will be applied not only to single nanosheets, but also to networks, films, and multicomponent heterostructures.
This work marks a major advance in the characterization of TMD materials, paving the way for innovations in high-performance printed electronics.
Read the full report here.
